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Diff: targets/cmsis/TARGET_STM/TARGET_DISCO_F429ZI/stm32f4xx_hal_flash_ex.c
- Revision:
- 384:ef87175507f1
- Parent:
- 383:0564d9840d0d
- Child:
- 385:be64abf45658
--- a/targets/cmsis/TARGET_STM/TARGET_DISCO_F429ZI/stm32f4xx_hal_flash_ex.c Mon Nov 03 11:00:07 2014 +0000
+++ /dev/null Thu Jan 01 00:00:00 1970 +0000
@@ -1,1301 +0,0 @@
-/**
- ******************************************************************************
- * @file stm32f4xx_hal_flash_ex.c
- * @author MCD Application Team
- * @version V1.1.0
- * @date 19-June-2014
- * @brief Extended FLASH HAL module driver.
- * This file provides firmware functions to manage the following
- * functionalities of the FLASH extension peripheral:
- * + Extended programming operations functions
- *
- @verbatim
- ==============================================================================
- ##### Flash Extension features #####
- ==============================================================================
-
- [..] Comparing to other previous devices, the FLASH interface for STM32F427xx/437xx and
- STM32F429xx/439xx devices contains the following additional features
-
- (+) Capacity up to 2 Mbyte with dual bank architecture supporting read-while-write
- capability (RWW)
- (+) Dual bank memory organization
- (+) PCROP protection for all banks
-
- ##### How to use this driver #####
- ==============================================================================
- [..] This driver provides functions to configure and program the FLASH memory
- of all STM32F427xx/437xx andSTM32F429xx/439xx devices. It includes
- (#) FLASH Memory Erase functions:
- (++) Lock and Unlock the FLASH interface using HAL_FLASH_Unlock() and
- HAL_FLASH_Lock() functions
- (++) Erase function: Erase sector, erase all sectors
- (++) There are two modes of erase :
- (+++) Polling Mode using HAL_FLASHEx_Erase()
- (+++) Interrupt Mode using HAL_FLASHEx_Erase_IT()
-
- (#) Option Bytes Programming functions: Use HAL_FLASHEx_OBProgram() to :
- (++) Set/Reset the write protection
- (++) Set the Read protection Level
- (++) Set the BOR level
- (++) Program the user Option Bytes
- (#) Advanced Option Bytes Programming functions: Use HAL_FLASHEx_AdvOBProgram() to :
- (++) Extended space (bank 2) erase function
- (++) Full FLASH space (2 Mo) erase (bank 1 and bank 2)
- (++) Dual Boot actrivation
- (++) Write protection configuration for bank 2
- (++) PCROP protection configuration and control for both banks
-
- @endverbatim
- ******************************************************************************
- * @attention
- *
- * <h2><center>© COPYRIGHT(c) 2014 STMicroelectronics</center></h2>
- *
- * Redistribution and use in source and binary forms, with or without modification,
- * are permitted provided that the following conditions are met:
- * 1. Redistributions of source code must retain the above copyright notice,
- * this list of conditions and the following disclaimer.
- * 2. Redistributions in binary form must reproduce the above copyright notice,
- * this list of conditions and the following disclaimer in the documentation
- * and/or other materials provided with the distribution.
- * 3. Neither the name of STMicroelectronics nor the names of its contributors
- * may be used to endorse or promote products derived from this software
- * without specific prior written permission.
- *
- * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS"
- * AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE
- * IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE
- * DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDER OR CONTRIBUTORS BE LIABLE
- * FOR ANY DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL
- * DAMAGES (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR
- * SERVICES; LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER
- * CAUSED AND ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY,
- * OR TORT (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE
- * OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
- *
- ******************************************************************************
- */
-
-/* Includes ------------------------------------------------------------------*/
-#include "stm32f4xx_hal.h"
-
-/** @addtogroup STM32F4xx_HAL_Driver
- * @{
- */
-
-/** @defgroup FLASHEx
- * @brief FLASH HAL Extension module driver
- * @{
- */
-
-#ifdef HAL_FLASH_MODULE_ENABLED
-
-/* Private typedef -----------------------------------------------------------*/
-/* Private define ------------------------------------------------------------*/
-#define SECTOR_MASK ((uint32_t)0xFFFFFF07)
-
-#define HAL_FLASH_TIMEOUT_VALUE ((uint32_t)50000)/* 50 s */
-/* Private macro -------------------------------------------------------------*/
-/* Private variables ---------------------------------------------------------*/
-extern FLASH_ProcessTypeDef pFlash;
-
-/* Private function prototypes -----------------------------------------------*/
-/* Option bytes control */
-static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks);
-static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks);
-static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks);
-static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level);
-static HAL_StatusTypeDef FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby);
-static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level);
-static uint8_t FLASH_OB_GetUser(void);
-static uint16_t FLASH_OB_GetWRP(void);
-static FlagStatus FLASH_OB_GetRDP(void);
-static uint8_t FLASH_OB_GetBOR(void);
-
-#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE)
-static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t Sector);
-static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t Sector);
-#endif /* STM32F401xC || STM32F401xE || STM32F411xE */
-
-#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx)
-static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks);
-static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks);
-static HAL_StatusTypeDef FLASH_OB_BootConfig(uint8_t BootConfig);
-#endif /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx */
-
-/* Private functions ---------------------------------------------------------*/
-extern HAL_StatusTypeDef FLASH_WaitForLastOperation(uint32_t Timeout);
-
-/** @defgroup FLASHEx_Private_Functions Extended FLASH Private functions
- * @{
- */
-
-/** @defgroup FLASHEx_Group1 Extended IO operation functions
- * @brief Extended IO operation functions
- *
-@verbatim
- ===============================================================================
- ##### Extended programming operation functions #####
- ===============================================================================
- [..]
- This subsection provides a set of functions allowing to manage the Extension FLASH
- programming operations Operations.
-
-@endverbatim
- * @{
- */
-/**
- * @brief Perform a mass erase or erase the specified FLASH memory sectors
- * @param[in] pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that
- * contains the configuration information for the erasing.
- *
- * @param[out] SectorError: pointer to variable that
- * contains the configuration information on faulty sector in case of error
- * (0xFFFFFFFF means that all the sectors have been correctly erased)
- *
- * @retval HAL Status
- */
-HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *SectorError)
-{
- HAL_StatusTypeDef status = HAL_ERROR;
- uint32_t index = 0;
-
- /* Process Locked */
- __HAL_LOCK(&pFlash);
-
- /* Check the parameters */
- assert_param(IS_TYPEERASE(pEraseInit->TypeErase));
-
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if (status == HAL_OK)
- {
- /*Initialization of SectorError variable*/
- *SectorError = 0xFFFFFFFF;
-
- if (pEraseInit->TypeErase == TYPEERASE_MASSERASE)
- {
- /*Mass erase to be done*/
- FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks);
-
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- /* if the erase operation is completed, disable the MER Bit */
- FLASH->CR &= (~FLASH_MER_BIT);
- }
- else
- {
- /* Check the parameters */
- assert_param(IS_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
-
- /* Erase by sector by sector to be done*/
- for(index = pEraseInit->Sector; index < (pEraseInit->NbSectors + pEraseInit->Sector); index++)
- {
- FLASH_Erase_Sector(index, (uint8_t) pEraseInit->VoltageRange);
-
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- /* If the erase operation is completed, disable the SER Bit */
- FLASH->CR &= (~FLASH_CR_SER);
- FLASH->CR &= SECTOR_MASK;
-
- if (status != HAL_OK)
- {
- /* In case of error, stop erase procedure and return the faulty sector*/
- *SectorError = index;
- break;
- }
- }
- }
- }
-
- /* Process Unlocked */
- __HAL_UNLOCK(&pFlash);
-
- return status;
-}
-
-/**
- * @brief Perform a mass erase or erase the specified FLASH memory sectors with interrupt enabled
- * @param pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that
- * contains the configuration information for the erasing.
- *
- * @retval HAL Status
- */
-HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit)
-{
- HAL_StatusTypeDef status = HAL_OK;
-
- /* Process Locked */
- __HAL_LOCK(&pFlash);
-
- /* Check the parameters */
- assert_param(IS_TYPEERASE(pEraseInit->TypeErase));
-
- /* Enable End of FLASH Operation interrupt */
- __HAL_FLASH_ENABLE_IT(FLASH_IT_EOP);
-
- /* Enable Error source interrupt */
- __HAL_FLASH_ENABLE_IT(FLASH_IT_ERR);
-
- /* Clear pending flags (if any) */
- __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |\
- FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR| FLASH_FLAG_PGSERR);
-
- if (pEraseInit->TypeErase == TYPEERASE_MASSERASE)
- {
- /*Mass erase to be done*/
- pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE;
- pFlash.Bank = pEraseInit->Banks;
- FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks);
- }
- else
- {
- /* Erase by sector to be done*/
-
- /* Check the parameters */
- assert_param(IS_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
-
- pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE;
- pFlash.NbSectorsToErase = pEraseInit->NbSectors;
- pFlash.Sector = pEraseInit->Sector;
- pFlash.VoltageForErase = (uint8_t)pEraseInit->VoltageRange;
-
- /*Erase 1st sector and wait for IT*/
- FLASH_Erase_Sector(pEraseInit->Sector, pEraseInit->VoltageRange);
- }
-
- return status;
-}
-
-/**
- * @brief Program option bytes
- * @param pOBInit: pointer to an FLASH_OBInitStruct structure that
- * contains the configuration information for the programming.
- *
- * @retval HAL Status
- */
-HAL_StatusTypeDef HAL_FLASHEx_OBProgram(FLASH_OBProgramInitTypeDef *pOBInit)
-{
- HAL_StatusTypeDef status = HAL_ERROR;
-
- /* Process Locked */
- __HAL_LOCK(&pFlash);
-
- /* Check the parameters */
- assert_param(IS_OPTIONBYTE(pOBInit->OptionType));
-
- /*Write protection configuration*/
- if((pOBInit->OptionType & OPTIONBYTE_WRP) == OPTIONBYTE_WRP)
- {
- assert_param(IS_WRPSTATE(pOBInit->WRPState));
- if (pOBInit->WRPState == WRPSTATE_ENABLE)
- {
- /*Enable of Write protection on the selected Sector*/
- status = FLASH_OB_EnableWRP(pOBInit->WRPSector, pOBInit->Banks);
- }
- else
- {
- /*Disable of Write protection on the selected Sector*/
- status = FLASH_OB_DisableWRP(pOBInit->WRPSector, pOBInit->Banks);
- }
- }
-
- /*Read protection configuration*/
- if((pOBInit->OptionType & OPTIONBYTE_RDP) == OPTIONBYTE_RDP)
- {
- status = FLASH_OB_RDP_LevelConfig(pOBInit->RDPLevel);
- }
-
- /*USER configuration*/
- if((pOBInit->OptionType & OPTIONBYTE_USER) == OPTIONBYTE_USER)
- {
- status = FLASH_OB_UserConfig(pOBInit->USERConfig&OB_IWDG_SW,
- pOBInit->USERConfig&OB_STOP_NO_RST,
- pOBInit->USERConfig&OB_STDBY_NO_RST);
- }
-
- /*BOR Level configuration*/
- if((pOBInit->OptionType & OPTIONBYTE_BOR) == OPTIONBYTE_BOR)
- {
- status = FLASH_OB_BOR_LevelConfig(pOBInit->BORLevel);
- }
-
- /* Process Unlocked */
- __HAL_UNLOCK(&pFlash);
-
- return status;
-}
-
-/**
- * @brief Get the Option byte configuration
- * @param pOBInit: pointer to an FLASH_OBInitStruct structure that
- * contains the configuration information for the programming.
- *
- * @retval None
- */
-void HAL_FLASHEx_OBGetConfig(FLASH_OBProgramInitTypeDef *pOBInit)
-{
- pOBInit->OptionType = OPTIONBYTE_WRP | OPTIONBYTE_RDP | OPTIONBYTE_USER | OPTIONBYTE_BOR;
-
- /*Get WRP*/
- pOBInit->WRPSector = FLASH_OB_GetWRP();
-
- /*Get RDP Level*/
- pOBInit->RDPLevel = FLASH_OB_GetRDP();
-
- /*Get USER*/
- pOBInit->USERConfig = FLASH_OB_GetUser();
-
- /*Get BOR Level*/
- pOBInit->BORLevel = FLASH_OB_GetBOR();
-}
-
-#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx) ||\
- defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE)
-/**
- * @brief Program option bytes
- * @param pAdvOBInit: pointer to an FLASH_AdvOBProgramInitTypeDef structure that
- * contains the configuration information for the programming.
- *
- * @retval HAL Status
- */
-HAL_StatusTypeDef HAL_FLASHEx_AdvOBProgram (FLASH_AdvOBProgramInitTypeDef *pAdvOBInit)
-{
- HAL_StatusTypeDef status = HAL_ERROR;
-
- /* Check the parameters */
- assert_param(IS_OBEX(pAdvOBInit->OptionType));
-
- /*Program PCROP option byte*/
- if (((pAdvOBInit->OptionType) & OBEX_PCROP) == OBEX_PCROP)
- {
- /* Check the parameters */
- assert_param(IS_PCROPSTATE(pAdvOBInit->PCROPState));
- if ((pAdvOBInit->PCROPState) == PCROPSTATE_ENABLE)
- {
- /*Enable of Write protection on the selected Sector*/
-#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE)
- status = FLASH_OB_EnablePCROP(pAdvOBInit->Sectors);
-#else /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx */
- status = FLASH_OB_EnablePCROP(pAdvOBInit->SectorsBank1, pAdvOBInit->SectorsBank2, pAdvOBInit->Banks);
-#endif /* STM32F401xC || STM32F401xE || STM32F411xE */
- }
- else
- {
- /*Disable of Write protection on the selected Sector*/
-#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE)
- status = FLASH_OB_DisablePCROP(pAdvOBInit->Sectors);
-#else /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx */
- status = FLASH_OB_DisablePCROP(pAdvOBInit->SectorsBank1, pAdvOBInit->SectorsBank2, pAdvOBInit->Banks);
-#endif /* STM32F401xC || STM32F401xE || STM32F411xE */
- }
- }
-
-#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx)
- /*Program BOOT config option byte*/
- if (((pAdvOBInit->OptionType) & OBEX_BOOTCONFIG) == OBEX_BOOTCONFIG)
- {
- status = FLASH_OB_BootConfig(pAdvOBInit->BootConfig);
- }
-#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx */
-
- return status;
-}
-
-/**
- * @brief Get the OBEX byte configuration
- * @param pAdvOBInit: pointer to an FLASH_AdvOBProgramInitTypeDef structure that
- * contains the configuration information for the programming.
- *
- * @retval None
- */
-void HAL_FLASHEx_AdvOBGetConfig(FLASH_AdvOBProgramInitTypeDef *pAdvOBInit)
-{
-#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE)
- /*Get Sector*/
- pAdvOBInit->Sectors = (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS));
-#else /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx */
- /*Get Sector for Bank1*/
- pAdvOBInit->SectorsBank1 = (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS));
-
- /*Get Sector for Bank2*/
- pAdvOBInit->SectorsBank2 = (*(__IO uint16_t *)(OPTCR1_BYTE2_ADDRESS));
-
- /*Get Boot config OB*/
- pAdvOBInit->BootConfig = *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS;
-#endif /* STM32F401xC || STM32F401xE || STM32F411xE */
-}
-
-/**
- * @brief Select the Protection Mode
- *
- * @note After PCROP activated Option Byte modification NOT POSSIBLE! excepted
- * Global Read Out Protection modification (from level1 to level0)
- * @note Once SPRMOD bit is active unprotection of a protected sector is not possible
- * @note Read a prtotected sector will set RDERR Flag and write a protected sector will set WRPERR Flag
- * @note This function can be used only for STM32F427xx/STM32F429xx/STM32F437xx/STM32F439xx/STM32F401xx devices.
- *
- * @param None
- * @retval HAL Status
- */
-HAL_StatusTypeDef HAL_FLASHEx_OB_SelectPCROP(void)
-{
- uint8_t optiontmp = 0xFF;
-
- /* Mask SPRMOD bit */
- optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE3_ADDRESS) & (uint8_t)0x7F);
-
- /* Update Option Byte */
- *(__IO uint8_t *)OPTCR_BYTE3_ADDRESS = (uint8_t)(OB_PCROP_SELECTED | optiontmp);
-
- return HAL_OK;
-
-}
-
-/**
- * @brief Deselect the Protection Mode
- *
- * @note After PCROP activated Option Byte modification NOT POSSIBLE! excepted
- * Global Read Out Protection modification (from level1 to level0)
- * @note Once SPRMOD bit is active unprotection of a protected sector is not possible
- * @note Read a prtotected sector will set RDERR Flag and write a protected sector will set WRPERR Flag
- * @note This function can be used only for STM32F427xx/STM32F429xx/STM32F437xx/STM32F439xx/STM32F401xx devices.
- *
- * @param None
- * @retval HAL Status
- */
-HAL_StatusTypeDef HAL_FLASHEx_OB_DeSelectPCROP(void)
-{
- uint8_t optiontmp = 0xFF;
-
- /* Mask SPRMOD bit */
- optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE3_ADDRESS) & (uint8_t)0x7F);
-
- /* Update Option Byte */
- *(__IO uint8_t *)OPTCR_BYTE3_ADDRESS = (uint8_t)(OB_PCROP_DESELECTED | optiontmp);
-
- return HAL_OK;
-}
-
-#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx || STM32F401xC || STM32F401xE || STM32F411xE */
-
-#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx)
-
-/**
- * @brief Returns the FLASH Write Protection Option Bytes value for Bank 2
- * @note This function can be used only for STM32F427X and STM32F429X devices.
- * @param None
- * @retval The FLASH Write Protection Option Bytes value
- */
-uint16_t HAL_FLASHEx_OB_GetBank2WRP(void)
-{
- /* Return the FLASH write protection Register value */
- return (*(__IO uint16_t *)(OPTCR1_BYTE2_ADDRESS));
-}
-#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx */
-
-/**
- * @}
- */
-
-#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx)
-/**
- * @brief Full erase of FLASH memory sectors
- * @param VoltageRange: The device voltage range which defines the erase parallelism.
- * This parameter can be one of the following values:
- * @arg VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
- * the operation will be done by byte (8-bit)
- * @arg VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
- * the operation will be done by half word (16-bit)
- * @arg VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
- * the operation will be done by word (32-bit)
- * @arg VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
- * the operation will be done by double word (64-bit)
- *
- * @param Banks: Banks to be erased
- * This parameter can be one of the following values:
- * @arg FLASH_BANK_1: Bank1 to be erased
- * @arg FLASH_BANK_2: Bank2 to be erased
- * @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased
- *
- * @retval HAL Status
- */
-static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks)
-{
- uint32_t tmp_psize = 0;
-
- /* Check the parameters */
- assert_param(IS_VOLTAGERANGE(VoltageRange));
- assert_param(IS_FLASH_BANK(Banks));
-
- /* if the previous operation is completed, proceed to erase all sectors */
- FLASH->CR &= CR_PSIZE_MASK;
- FLASH->CR |= tmp_psize;
- if(Banks == FLASH_BANK_BOTH)
- {
- /* bank1 & bank2 will be erased*/
- FLASH->CR |= FLASH_MER_BIT;
- }
- else if(Banks == FLASH_BANK_1)
- {
- /*Only bank1 will be erased*/
- FLASH->CR |= FLASH_CR_MER1;
- }
- else
- {
- /*Only bank2 will be erased*/
- FLASH->CR |= FLASH_CR_MER2;
- }
- FLASH->CR |= FLASH_CR_STRT;
-}
-
-/**
- * @brief Erase the specified FLASH memory sector
- * @param Sector: FLASH sector to erase
- * The value of this parameter depend on device used within the same series
- * @param VoltageRange: The device voltage range which defines the erase parallelism.
- * This parameter can be one of the following values:
- * @arg VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
- * the operation will be done by byte (8-bit)
- * @arg VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
- * the operation will be done by half word (16-bit)
- * @arg VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
- * the operation will be done by word (32-bit)
- * @arg VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
- * the operation will be done by double word (64-bit)
- *
- * @retval None
- */
-void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange)
-{
- uint32_t tmp_psize = 0;
-
- /* Check the parameters */
- assert_param(IS_FLASH_SECTOR(Sector));
- assert_param(IS_VOLTAGERANGE(VoltageRange));
-
- if(VoltageRange == VOLTAGE_RANGE_1)
- {
- tmp_psize = FLASH_PSIZE_BYTE;
- }
- else if(VoltageRange == VOLTAGE_RANGE_2)
- {
- tmp_psize = FLASH_PSIZE_HALF_WORD;
- }
- else if(VoltageRange == VOLTAGE_RANGE_3)
- {
- tmp_psize = FLASH_PSIZE_WORD;
- }
- else
- {
- tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
- }
-
- /* Need to add offset of 4 when sector higher than FLASH_SECTOR_11 */
- if (Sector > FLASH_SECTOR_11)
- {
- Sector += 4;
- }
- /* If the previous operation is completed, proceed to erase the sector */
- FLASH->CR &= CR_PSIZE_MASK;
- FLASH->CR |= tmp_psize;
- FLASH->CR &= SECTOR_MASK;
- FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB));
- FLASH->CR |= FLASH_CR_STRT;
-}
-
-/**
- * @brief Enable the write protection of the desired bank1 or bank 2 sectors
- *
- * @note When the memory read protection level is selected (RDP level = 1),
- * it is not possible to program or erase the flash sector i if CortexM4
- * debug features are connected or boot code is executed in RAM, even if nWRPi = 1
- * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
- *
- * @param WRPSector: specifies the sector(s) to be write protected.
- * This parameter can be one of the following values:
- * @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_23
- * @arg OB_WRP_SECTOR_All
- * @note BANK2 starts from OB_WRP_SECTOR_12
- *
- * @param Banks: Enable write protection on all the sectors for the specific bank
- * This parameter can be one of the following values:
- * @arg FLASH_BANK_1: WRP on all sectors of bank1
- * @arg FLASH_BANK_2: WRP on all sectors of bank2
- * @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2
- *
- * @retval HAL FLASH State
- */
-static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks)
-{
- HAL_StatusTypeDef status = HAL_OK;
-
- /* Check the parameters */
- assert_param(IS_OB_WRP_SECTOR(WRPSector));
- assert_param(IS_FLASH_BANK(Banks));
-
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- if (((WRPSector == OB_WRP_SECTOR_All) && ((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))) ||
- (WRPSector < OB_WRP_SECTOR_12))
- {
- if (WRPSector == OB_WRP_SECTOR_All)
- {
- /*Write protection on all sector of BANK1*/
- *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~(WRPSector>>12));
- }
- else
- {
- /*Write protection done on sectors of BANK1*/
- *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~WRPSector);
- }
- }
- else
- {
- /*Write protection done on sectors of BANK2*/
- *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~(WRPSector>>12));
- }
-
- /*Write protection on all sector of BANK2*/
- if ((WRPSector == OB_WRP_SECTOR_All) && (Banks == FLASH_BANK_BOTH))
- {
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~(WRPSector>>12));
- }
- }
-
- }
-
- return status;
-}
-
-/**
- * @brief Disable the write protection of the desired bank1 or bank 2 sectors
- *
- * @note When the memory read protection level is selected (RDP level = 1),
- * it is not possible to program or erase the flash sector i if CortexM4
- * debug features are connected or boot code is executed in RAM, even if nWRPi = 1
- * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
- *
- * @param WRPSector: specifies the sector(s) to be write protected.
- * This parameter can be one of the following values:
- * @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_23
- * @arg OB_WRP_Sector_All
- * @note BANK2 starts from OB_WRP_SECTOR_12
- *
- * @param Banks: Disable write protection on all the sectors for the specific bank
- * This parameter can be one of the following values:
- * @arg FLASH_BANK_1: Bank1 to be erased
- * @arg FLASH_BANK_2: Bank2 to be erased
- * @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased
- *
- * @retval HAL Staus
- */
-static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks)
-{
- HAL_StatusTypeDef status = HAL_OK;
-
- /* Check the parameters */
- assert_param(IS_OB_WRP_SECTOR(WRPSector));
- assert_param(IS_FLASH_BANK(Banks));
-
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- if (((WRPSector == OB_WRP_SECTOR_All) && ((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))) ||
- (WRPSector < OB_WRP_SECTOR_12))
- {
- if (WRPSector == OB_WRP_SECTOR_All)
- {
- /*Write protection on all sector of BANK1*/
- *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12);
- }
- else
- {
- /*Write protection done on sectors of BANK1*/
- *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)WRPSector;
- }
- }
- else
- {
- /*Write protection done on sectors of BANK2*/
- *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12);
- }
-
- /*Write protection on all sector of BANK2*/
- if ((WRPSector == OB_WRP_SECTOR_All) && (Banks == FLASH_BANK_BOTH))
- {
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12);
- }
- }
-
- }
-
- return status;
-}
-
-/**
- * @brief Configure the Dual Bank Boot.
- *
- * @note This function can be used only for STM32F42xxx/43xxx devices.
- *
- * @param BootConfig specifies the Dual Bank Boot Option byte.
- * This parameter can be one of the following values:
- * @arg OB_Dual_BootEnabled: Dual Bank Boot Enable
- * @arg OB_Dual_BootDisabled: Dual Bank Boot Disabled
- * @retval None
- */
-static HAL_StatusTypeDef FLASH_OB_BootConfig(uint8_t BootConfig)
-{
- HAL_StatusTypeDef status = HAL_OK;
-
- /* Check the parameters */
- assert_param(IS_OB_BOOT(BootConfig));
-
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- /* Set Dual Bank Boot */
- *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BFB2);
- *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= BootConfig;
- }
-
- return status;
-}
-
-/**
- * @brief Enable the read/write protection (PCROP) of the desired
- * sectors of Bank 1 and/or Bank 2.
- * @note This function can be used only for STM32F42xxx/43xxx devices.
- * @param SectorBank1 Specifies the sector(s) to be read/write protected or unprotected for bank1.
- * This parameter can be one of the following values:
- * @arg OB_PCROP: A value between OB_PCROP_SECTOR_0 and OB_PCROP_SECTOR_11
- * @arg OB_PCROP_SECTOR__All
- * @param SectorBank2 Specifies the sector(s) to be read/write protected or unprotected for bank2.
- * This parameter can be one of the following values:
- * @arg OB_PCROP: A value between OB_PCROP_SECTOR_12 and OB_PCROP_SECTOR_23
- * @arg OB_PCROP_SECTOR__All
- * @param Banks Enable PCROP protection on all the sectors for the specific bank
- * This parameter can be one of the following values:
- * @arg FLASH_BANK_1: WRP on all sectors of bank1
- * @arg FLASH_BANK_2: WRP on all sectors of bank2
- * @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2
- *
- * @retval HAL Status
- */
-static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks)
-{
- HAL_StatusTypeDef status = HAL_OK;
-
- assert_param(IS_FLASH_BANK(Banks));
-
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- if ((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))
- {
- assert_param(IS_OB_PCROP(SectorBank1));
- /*Write protection done on sectors of BANK1*/
- *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)SectorBank1;
- }
- else
- {
- assert_param(IS_OB_PCROP(SectorBank2));
- /*Write protection done on sectors of BANK2*/
- *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)SectorBank2;
- }
-
- /*Write protection on all sector of BANK2*/
- if (Banks == FLASH_BANK_BOTH)
- {
- assert_param(IS_OB_PCROP(SectorBank2));
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- /*Write protection done on sectors of BANK2*/
- *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)SectorBank2;
- }
- }
-
- }
-
- return status;
-}
-
-
-/**
- * @brief Disable the read/write protection (PCROP) of the desired
- * sectors of Bank 1 and/or Bank 2.
- * @note This function can be used only for STM32F42xxx/43xxx devices.
- * @param SectorBank1 specifies the sector(s) to be read/write protected or unprotected for bank1.
- * This parameter can be one of the following values:
- * @arg OB_PCROP: A value between OB_PCROP_SECTOR_0 and OB_PCROP_SECTOR_11
- * @arg OB_PCROP_SECTOR__All
- * @param SectorBank2 Specifies the sector(s) to be read/write protected or unprotected for bank2.
- * This parameter can be one of the following values:
- * @arg OB_PCROP: A value between OB_PCROP_SECTOR_12 and OB_PCROP_SECTOR_23
- * @arg OB_PCROP_SECTOR__All
- * @param Banks Disable PCROP protection on all the sectors for the specific bank
- * This parameter can be one of the following values:
- * @arg FLASH_BANK_1: WRP on all sectors of bank1
- * @arg FLASH_BANK_2: WRP on all sectors of bank2
- * @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2
- *
- * @retval HAL Status
- */
-static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks)
-{
- HAL_StatusTypeDef status = HAL_OK;
-
- /* Check the parameters */
- assert_param(IS_FLASH_BANK(Banks));
-
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- if ((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))
- {
- assert_param(IS_OB_PCROP(SectorBank1));
- /*Write protection done on sectors of BANK1*/
- *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~SectorBank1);
- }
- else
- {
- /*Write protection done on sectors of BANK2*/
- assert_param(IS_OB_PCROP(SectorBank2));
- *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~SectorBank2);
- }
-
- /*Write protection on all sector of BANK2*/
- if (Banks == FLASH_BANK_BOTH)
- {
- assert_param(IS_OB_PCROP(SectorBank2));
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- /*Write protection done on sectors of BANK2*/
- *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~SectorBank2);
- }
- }
-
- }
-
- return status;
-
-}
-
-#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx */
-
-#if defined(STM32F405xx) || defined(STM32F415xx) || defined(STM32F407xx)|| defined(STM32F417xx) ||\
- defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE)
-/**
- * @brief Mass erase of FLASH memory
- * @param VoltageRange: The device voltage range which defines the erase parallelism.
- * This parameter can be one of the following values:
- * @arg VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
- * the operation will be done by byte (8-bit)
- * @arg VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
- * the operation will be done by half word (16-bit)
- * @arg VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
- * the operation will be done by word (32-bit)
- * @arg VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
- * the operation will be done by double word (64-bit)
- *
- * @param Banks: Banks to be erased
- * This parameter can be one of the following values:
- * @arg FLASH_BANK_1: Bank1 to be erased
- *
- * @retval None
- */
-static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks)
-{
- uint32_t tmp_psize = 0;
-
- /* Check the parameters */
- assert_param(IS_VOLTAGERANGE(VoltageRange));
- assert_param(IS_FLASH_BANK(Banks));
-
- /* If the previous operation is completed, proceed to erase all sectors */
- FLASH->CR &= CR_PSIZE_MASK;
- FLASH->CR |= tmp_psize;
- FLASH->CR |= FLASH_CR_MER;
- FLASH->CR |= FLASH_CR_STRT;
-}
-
-/**
- * @brief Erase the specified FLASH memory sector
- * @param Sector: FLASH sector to erase
- * The value of this parameter depend on device used within the same series
- * @param VoltageRange: The device voltage range which defines the erase parallelism.
- * This parameter can be one of the following values:
- * @arg VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
- * the operation will be done by byte (8-bit)
- * @arg VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
- * the operation will be done by half word (16-bit)
- * @arg VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
- * the operation will be done by word (32-bit)
- * @arg VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
- * the operation will be done by double word (64-bit)
- *
- * @retval None
- */
-void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange)
-{
- uint32_t tmp_psize = 0;
-
- /* Check the parameters */
- assert_param(IS_FLASH_SECTOR(Sector));
- assert_param(IS_VOLTAGERANGE(VoltageRange));
-
- if(VoltageRange == VOLTAGE_RANGE_1)
- {
- tmp_psize = FLASH_PSIZE_BYTE;
- }
- else if(VoltageRange == VOLTAGE_RANGE_2)
- {
- tmp_psize = FLASH_PSIZE_HALF_WORD;
- }
- else if(VoltageRange == VOLTAGE_RANGE_3)
- {
- tmp_psize = FLASH_PSIZE_WORD;
- }
- else
- {
- tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
- }
-
- /* If the previous operation is completed, proceed to erase the sector */
- FLASH->CR &= CR_PSIZE_MASK;
- FLASH->CR |= tmp_psize;
- FLASH->CR &= SECTOR_MASK;
- FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB));
- FLASH->CR |= FLASH_CR_STRT;
-}
-
-/**
- * @brief Enable the write protection of the desired bank 1 sectors
- *
- * @note When the memory read protection level is selected (RDP level = 1),
- * it is not possible to program or erase the flash sector i if CortexM4
- * debug features are connected or boot code is executed in RAM, even if nWRPi = 1
- * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
- *
- * @param WRPSector: specifies the sector(s) to be write protected.
- * The value of this parameter depend on device used within the same series
- *
- * @param Banks: Enable write protection on all the sectors for the specific bank
- * This parameter can be one of the following values:
- * @arg FLASH_BANK_1: WRP on all sectors of bank1
- *
- * @retval HAL Status
- */
-static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks)
-{
- HAL_StatusTypeDef status = HAL_OK;
-
- /* Check the parameters */
- assert_param(IS_OB_WRP_SECTOR(WRPSector));
- assert_param(IS_FLASH_BANK(Banks));
-
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~WRPSector);
- }
-
- return status;
-}
-
-/**
- * @brief Disable the write protection of the desired bank 1 sectors
- *
- * @note When the memory read protection level is selected (RDP level = 1),
- * it is not possible to program or erase the flash sector i if CortexM4
- * debug features are connected or boot code is executed in RAM, even if nWRPi = 1
- * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
- *
- * @param WRPSector: specifies the sector(s) to be write protected.
- * The value of this parameter depend on device used within the same series
- *
- * @param Banks: Enable write protection on all the sectors for the specific bank
- * This parameter can be one of the following values:
- * @arg FLASH_BANK_1: WRP on all sectors of bank1
- *
- * @retval HAL Status
- */
-static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks)
-{
- HAL_StatusTypeDef status = HAL_OK;
-
- /* Check the parameters */
- assert_param(IS_OB_WRP_SECTOR(WRPSector));
- assert_param(IS_FLASH_BANK(Banks));
-
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)WRPSector;
- }
-
- return status;
-}
-#endif /* STM32F405xx || STM32F415xx || STM32F407xx || STM32F417xx || STM32F401xC || STM32F401xE || STM32F411xE */
-
-#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F411xE)
-/**
- * @brief Enable the read/write protection (PCROP) of the desired sectors.
- * @note This function can be used only for STM32F401xx devices.
- * @param Sector specifies the sector(s) to be read/write protected or unprotected.
- * This parameter can be one of the following values:
- * @arg OB_PCROP: A value between OB_PCROP_Sector0 and OB_PCROP_Sector5
- * @arg OB_PCROP_Sector_All
- * @retval HAL Status
- */
-static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t Sector)
-{
- HAL_StatusTypeDef status = HAL_OK;
-
- /* Check the parameters */
- assert_param(IS_OB_PCROP(Sector));
-
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)Sector;
- }
-
- return status;
-}
-
-
-/**
- * @brief Disable the read/write protection (PCROP) of the desired sectors.
- * @note This function can be used only for STM32F401xx devices.
- * @param Sector specifies the sector(s) to be read/write protected or unprotected.
- * This parameter can be one of the following values:
- * @arg OB_PCROP: A value between OB_PCROP_Sector0 and OB_PCROP_Sector5
- * @arg OB_PCROP_Sector_All
- * @retval HAL Status
- */
-static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t Sector)
-{
- HAL_StatusTypeDef status = HAL_OK;
-
- /* Check the parameters */
- assert_param(IS_OB_PCROP(Sector));
-
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~Sector);
- }
-
- return status;
-
-}
-#endif /* STM32F401xC || STM32F401xE || STM32F411xE */
-
-/**
- * @brief Set the read protection level.
- * @param Level: specifies the read protection level.
- * This parameter can be one of the following values:
- * @arg OB_RDP_LEVEL_0: No protection
- * @arg OB_RDP_LEVEL_1: Read protection of the memory
- * @arg OB_RDP_LEVEL_2: Full chip protection
- *
- * @note WARNING: When enabling OB_RDP level 2 it's no more possible to go back to level 1 or 0
- *
- * @retval HAL Status
- */
-static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level)
-{
- HAL_StatusTypeDef status = HAL_OK;
-
- /* Check the parameters */
- assert_param(IS_OB_RDP_LEVEL(Level));
-
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- *(__IO uint8_t*)OPTCR_BYTE1_ADDRESS = Level;
- }
-
- return status;
-}
-
-/**
- * @brief Program the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY.
- * @param Iwdg: Selects the IWDG mode
- * This parameter can be one of the following values:
- * @arg OB_IWDG_SW: Software IWDG selected
- * @arg OB_IWDG_HW: Hardware IWDG selected
- * @param Stop: Reset event when entering STOP mode.
- * This parameter can be one of the following values:
- * @arg OB_STOP_NO_RST: No reset generated when entering in STOP
- * @arg OB_STOP_RST: Reset generated when entering in STOP
- * @param Stdby: Reset event when entering Standby mode.
- * This parameter can be one of the following values:
- * @arg OB_STDBY_NO_RST: No reset generated when entering in STANDBY
- * @arg OB_STDBY_RST: Reset generated when entering in STANDBY
- * @retval HAL Status
- */
-static HAL_StatusTypeDef FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby)
-{
- uint8_t optiontmp = 0xFF;
- HAL_StatusTypeDef status = HAL_OK;
-
- /* Check the parameters */
- assert_param(IS_OB_IWDG_SOURCE(Iwdg));
- assert_param(IS_OB_STOP_SOURCE(Stop));
- assert_param(IS_OB_STDBY_SOURCE(Stdby));
-
- /* Wait for last operation to be completed */
- status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
-
- if(status == HAL_OK)
- {
- /* Mask OPTLOCK, OPTSTRT, BOR_LEV and BFB2 bits */
- optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS) & (uint8_t)0x1F);
-
- /* Update User Option Byte */
- *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS = Iwdg | (uint8_t)(Stdby | (uint8_t)(Stop | ((uint8_t)optiontmp)));
- }
-
- return status;
-
-}
-
-/**
- * @brief Set the BOR Level.
- * @param Level: specifies the Option Bytes BOR Reset Level.
- * This parameter can be one of the following values:
- * @arg OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
- * @arg OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
- * @arg OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
- * @arg OB_BOR_OFF: Supply voltage ranges from 1.62 to 2.1 V
- * @retval HAL Status
- */
-static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level)
-{
- /* Check the parameters */
- assert_param(IS_OB_BOR_LEVEL(Level));
-
- /* Set the BOR Level */
- *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BOR_LEV);
- *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= Level;
-
- return HAL_OK;
-
-}
-
-/**
- * @brief Return the FLASH User Option Byte value.
- * @param None
- * @retval uint8_t FLASH User Option Bytes values: IWDG_SW(Bit0), RST_STOP(Bit1)
- * and RST_STDBY(Bit2).
- */
-static uint8_t FLASH_OB_GetUser(void)
-{
- /* Return the User Option Byte */
- return ((uint8_t)(FLASH->OPTCR & 0xE0));
-}
-
-/**
- * @brief Return the FLASH Write Protection Option Bytes value.
- * @param None
- * @retval uint16_t FLASH Write Protection Option Bytes value
- */
-static uint16_t FLASH_OB_GetWRP(void)
-{
- /* Return the FLASH write protection Register value */
- return (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS));
-}
-
-/**
- * @brief Returns the FLASH Read Protection level.
- * @param None
- * @retval FlagStatus FLASH ReadOut Protection Status:
- * - SET, when OB_RDP_Level_1 or OB_RDP_Level_2 is set
- * - RESET, when OB_RDP_Level_0 is set
- */
-static FlagStatus FLASH_OB_GetRDP(void)
-{
- FlagStatus readstatus = RESET;
-
- if ((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) != (uint8_t)OB_RDP_LEVEL_0))
- {
- readstatus = SET;
- }
-
- return readstatus;
-}
-
-/**
- * @brief Returns the FLASH BOR level.
- * @param None
- * @retval uint8_t The FLASH BOR level:
- * - OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
- * - OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
- * - OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
- * - OB_BOR_OFF : Supply voltage ranges from 1.62 to 2.1 V
- */
-static uint8_t FLASH_OB_GetBOR(void)
-{
- /* Return the FLASH BOR level */
- return (uint8_t)(*(__IO uint8_t *)(OPTCR_BYTE0_ADDRESS) & (uint8_t)0x0C);
-}
-
-/**
- * @}
- */
-
-#endif /* HAL_FLASH_MODULE_ENABLED */
-
-/**
- * @}
- */
-
-/**
- * @}
- */
-
-/************************ (C) COPYRIGHT STMicroelectronics *****END OF FILE****/
