mbed library sources

Fork of mbed-src by mbed official

Revision:
394:83f921546702
Parent:
354:e67efb2aab0e
--- /dev/null	Thu Jan 01 00:00:00 1970 +0000
+++ b/targets/cmsis/TARGET_STM/TARGET_STM32L1/stm32l1xx_hal_flash_ramfunc.c	Fri Nov 07 15:45:07 2014 +0000
@@ -0,0 +1,545 @@
+/**
+  ******************************************************************************
+  * @file    stm32l1xx_hal_flash_ramfunc.c
+  * @author  MCD Application Team
+  * @version V1.0.0
+  * @date    5-September-2014
+  * @brief   FLASH RAMFUNC driver.
+  *          This file provides a Flash firmware functions which should be 
+  *          executed from internal SRAM
+  *
+  *  @verbatim
+
+    *** ARM Compiler ***
+    --------------------
+    [..] RAM functions are defined using the toolchain options. 
+         Functions that are be executed in RAM should reside in a separate
+         source module. Using the 'Options for File' dialog you can simply change
+         the 'Code / Const' area of a module to a memory space in physical RAM.
+         Available memory areas are declared in the 'Target' tab of the 
+         Options for Target' dialog.
+
+    *** ICCARM Compiler ***
+    -----------------------
+    [..] RAM functions are defined using a specific toolchain keyword "__ramfunc".
+
+    *** GNU Compiler ***
+    --------------------
+    [..] RAM functions are defined using a specific toolchain attribute
+         "__attribute__((section(".RamFunc")))".
+
+@endverbatim
+  ******************************************************************************
+  * @attention
+  *
+  * <h2><center>&copy; COPYRIGHT(c) 2014 STMicroelectronics</center></h2>
+  *
+  * Redistribution and use in source and binary forms, with or without modification,
+  * are permitted provided that the following conditions are met:
+  *   1. Redistributions of source code must retain the above copyright notice,
+  *      this list of conditions and the following disclaimer.
+  *   2. Redistributions in binary form must reproduce the above copyright notice,
+  *      this list of conditions and the following disclaimer in the documentation
+  *      and/or other materials provided with the distribution.
+  *   3. Neither the name of STMicroelectronics nor the names of its contributors
+  *      may be used to endorse or promote products derived from this software
+  *      without specific prior written permission.
+  *
+  * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS"
+  * AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE
+  * IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE
+  * DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDER OR CONTRIBUTORS BE LIABLE
+  * FOR ANY DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL
+  * DAMAGES (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR
+  * SERVICES; LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER
+  * CAUSED AND ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY,
+  * OR TORT (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE
+  * OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
+  *
+  ******************************************************************************
+  */
+
+/* Includes ------------------------------------------------------------------*/
+#include "stm32l1xx_hal.h"
+
+/** @addtogroup STM32L1xx_HAL_Driver
+  * @{
+  */
+
+/** @defgroup FLASHRamfunc FLASHRamfunc
+  * @brief FLASH functions executed from RAM
+  * @{
+  */ 
+
+#ifdef HAL_FLASH_MODULE_ENABLED
+
+/* Private typedef -----------------------------------------------------------*/
+/* Private define ------------------------------------------------------------*/
+/* Private macro -------------------------------------------------------------*/
+/* Private variables ---------------------------------------------------------*/
+/* Private function prototypes -----------------------------------------------*/
+static __RAM_FUNC FLASHRAM_WaitForLastOperation(uint32_t Timeout);
+
+/* Private functions ---------------------------------------------------------*/
+ 
+/** @defgroup FLASHRamfunc_Exported_Functions FLASH RAM Exported Functions
+ *
+@verbatim  
+ ===============================================================================
+                      ##### ramfunc functions #####
+ ===============================================================================  
+    [..]
+    This subsection provides a set of functions that should be executed from RAM 
+    transfers.
+
+@endverbatim
+  * @{
+  */ 
+
+/** @defgroup FLASHRamfunc_Exported_Functions_Group1 FLASH RAM Peripheral  features functions 
+  * @{
+  */  
+
+/**
+  * @brief  Enable  the power down mode during RUN mode.
+  * @note  This function can be used only when the user code is running from Internal SRAM.
+  * @retval None
+  */
+__RAM_FUNC HAL_FLASHEx_EnableRunPowerDown(void)
+{
+  /* Enable the Power Down in Run mode*/
+  __HAL_FLASH_POWER_DOWN_ENABLE();
+  
+  return HAL_OK;
+}
+
+
+/**
+  * @brief  Disable the power down mode during RUN mode.
+  * @note  This function can be used only when the user code is running from Internal SRAM.
+  * @retval None
+  */
+__RAM_FUNC HAL_FLASHEx_DisableRunPowerDown(void)
+{
+  /* Disable the Power Down in Run mode*/
+  __HAL_FLASH_POWER_DOWN_DISABLE();
+
+  return HAL_OK;  
+}
+
+/**
+  * @}
+  */
+
+/** @defgroup FLASHRamfunc_Exported_Functions_Group2 FLASH RAM Programming and erasing operation functions 
+ *
+@verbatim  
+@endverbatim
+  * @{
+  */
+
+#if defined (STM32L151xD) || defined (STM32L152xD) || defined (STM32L162xD) || \
+    defined(STM32L151xE) || defined (STM32L152xE) || defined (STM32L162xE)
+/**
+  * @brief  Erases a specified 2 page in program memory in parallel.
+  * @note   This function can be used only for STM32L151xD, STM32L152xD), STM32L162xD and Cat5  devices.
+  *         To correctly run this function, the HAL_FLASH_Unlock() function
+  *         must be called before.
+  *         Call the HAL_FLASH_Lock() to disable the flash memory access 
+  *        (recommended to protect the FLASH memory against possible unwanted operation).
+  * @param  Page_Address1: The page address in program memory to be erased in 
+  *         the first Bank (BANK1). This parameter should be between FLASH_BASE
+  *         and FLASH_BANK1_END.
+  * @param  Page_Address2: The page address in program memory to be erased in 
+  *         the second Bank (BANK2). This parameter should be between FLASH_BANK2_BASE
+  *         and FLASH_BANK2_END.
+  * @note   A Page is erased in the Program memory only if the address to load 
+  *         is the start address of a page (multiple of 256 bytes).
+  * @retval HAL Status: The returned value can be: 
+  *          HAL_ERROR, HAL_OK or HAL_TIMEOUT.
+  */
+__RAM_FUNC HAL_FLASHEx_EraseParallelPage(uint32_t Page_Address1, uint32_t Page_Address2)
+{
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Wait for last operation to be completed */
+  status = FLASHRAM_WaitForLastOperation(HAL_FLASH_TIMEOUT_VALUE);
+  
+  if(status == HAL_OK)
+  {
+    /* If the previous operation is completed, proceed to erase the page */
+
+    /* Set the PARALLBANK bit */
+    FLASH->PECR |= FLASH_PECR_PARALLBANK;
+    
+    /* Set the ERASE bit */
+    FLASH->PECR |= FLASH_PECR_ERASE;
+
+    /* Set PROG bit */
+    FLASH->PECR |= FLASH_PECR_PROG;
+  
+    /* Write 00000000h to the first word of the first program page to erase */
+    *(__IO uint32_t *)Page_Address1 = 0x00000000;
+    /* Write 00000000h to the first word of the second program page to erase */    
+    *(__IO uint32_t *)Page_Address2 = 0x00000000;    
+ 
+    /* Wait for last operation to be completed */
+    status = FLASHRAM_WaitForLastOperation(HAL_FLASH_TIMEOUT_VALUE);
+
+    /* If the erase operation is completed, disable the ERASE, PROG and PARALLBANK bits */
+    FLASH->PECR &= (uint32_t)(~FLASH_PECR_PROG);
+    FLASH->PECR &= (uint32_t)(~FLASH_PECR_ERASE);
+    FLASH->PECR &= (uint32_t)(~FLASH_PECR_PARALLBANK);   
+  }     
+  /* Return the Erase Status */
+  return status;
+}
+
+/**
+  * @brief  Programs 2 half page in program memory in parallel.
+  * @note   This function can be used only for STM32L151xD, STM32L152xD), STM32L162xD and Cat5  devices.
+  * @param  Address1: specifies the first address to be written in the first bank 
+  *        (BANK1). This parameter should be between FLASH_BASE and (FLASH_BANK1_END - FLASH_PAGE_SIZE).
+  * @param  pBuffer1: pointer to the buffer  containing the data to be  written 
+  *         to the first half page in the first bank.
+  * @param  Address2: specifies the second address to be written in the second bank
+  *        (BANK2). This parameter should be between FLASH_BANK2_BASE and (FLASH_BANK2_END - FLASH_PAGE_SIZE).
+  * @param  pBuffer2: pointer to the buffer containing the data to be  written 
+  *         to the second half page in the second bank.
+  * @note   To correctly run this function, the HAL_FLASH_Unlock() function
+  *         must be called before.
+  *         Call the HAL_FLASH_Lock() to disable the flash memory access  
+  *         (recommended to protect the FLASH memory against possible unwanted operation).
+  * @note   Half page write is possible only from SRAM.
+  * @note   If there are more than 32 words to write, after 32 words another 
+  *         Half Page programming operation starts and has to be finished.
+  * @note   A half page is written to the program memory only if the first 
+  *         address to load is the start address of a half page (multiple of 128 
+  *         bytes) and the 31 remaining words to load are in the same half page.
+  * @note   During the Program memory half page write all read operations are 
+  *         forbidden (this includes DMA read operations and debugger read 
+  *         operations such as breakpoints, periodic updates, etc.).
+  * @note   If a PGAERR is set during a Program memory half page write, the 
+  *         complete write operation is aborted. Software should then reset the 
+  *         FPRG and PROG/DATA bits and restart the write operation from the 
+  *         beginning.
+  * @retval HAL Status: The returned value can be:  
+  *          HAL_ERROR, HAL_OK or HAL_TIMEOUT.
+  */
+__RAM_FUNC HAL_FLASHEx_ProgramParallelHalfPage(uint32_t Address1, uint32_t* pBuffer1, uint32_t Address2, uint32_t* pBuffer2)
+{
+  uint32_t count = 0; 
+   
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Set the DISMCYCINT[0] bit in the Auxillary Control Register (0xE000E008) 
+     This bit prevents the interruption of multicycle instructions and therefore 
+     will increase the interrupt latency. of Cortex-M3. */
+  SCnSCB->ACTLR |= SCnSCB_ACTLR_DISMCYCINT_Msk;
+
+  /* Wait for last operation to be completed */
+  status = FLASHRAM_WaitForLastOperation(HAL_FLASH_TIMEOUT_VALUE);
+  
+  if(status == HAL_OK)
+  {
+    /* If the previous operation is completed, proceed to program the new  
+       half page */
+    FLASH->PECR |= FLASH_PECR_PARALLBANK;
+    FLASH->PECR |= FLASH_PECR_FPRG;
+    FLASH->PECR |= FLASH_PECR_PROG;
+    
+  /* Wait for last operation to be completed */
+  status = FLASHRAM_WaitForLastOperation(HAL_FLASH_TIMEOUT_VALUE);
+  if(status == HAL_OK)
+  {
+    /* Write the first half page directly with 32 different words */
+    while(count < 32)
+    {
+      *(__IO uint32_t*) ((uint32_t)(Address1 + (4 * count))) = *(pBuffer1++);
+      count ++;  
+    }
+    count = 0;
+
+    /* Write the second half page directly with 32 different words */
+    while(count < 32)
+    {
+      *(__IO uint32_t*) ((uint32_t)(Address2 + (4 * count))) = *(pBuffer2++);
+      count ++;  
+    }
+    /* Wait for last operation to be completed */
+    status = FLASHRAM_WaitForLastOperation(HAL_FLASH_TIMEOUT_VALUE);
+  } 
+    /* if the write operation is completed, disable the PROG, FPRG and PARALLBANK bits */
+    FLASH->PECR &= (uint32_t)(~FLASH_PECR_PROG);
+    FLASH->PECR &= (uint32_t)(~FLASH_PECR_FPRG);
+    FLASH->PECR &= (uint32_t)(~FLASH_PECR_PARALLBANK);
+  }
+
+  SCnSCB->ACTLR &= ~SCnSCB_ACTLR_DISMCYCINT_Msk;
+    
+  /* Return the Write Status */
+  return status;
+}
+#endif /* STM32L151xD || STM32L152xD || STM32L162xD || STM32L151xE || STM32L152xE || STM32L162xE */
+
+/**
+  * @brief  Programs a half page in program memory.
+  * @param  Address: specifies the address to be written.
+  * @param  pBuffer: pointer to the buffer  containing the data to be  written to 
+  *         the half page.
+  * @note   To correctly run this function, the HAL_FLASH_Unlock() function
+  *         must be called before.
+  *         Call the HAL_FLASH_Lock() to disable the flash memory access  
+  *         (recommended to protect the FLASH memory against possible unwanted operation)
+  * @note   Half page write is possible only from SRAM.
+  * @note   If there are more than 32 words to write, after 32 words another 
+  *         Half Page programming operation starts and has to be finished.
+  * @note   A half page is written to the program memory only if the first 
+  *         address to load is the start address of a half page (multiple of 128 
+  *         bytes) and the 31 remaining words to load are in the same half page.
+  * @note   During the Program memory half page write all read operations are 
+  *         forbidden (this includes DMA read operations and debugger read 
+  *         operations such as breakpoints, periodic updates, etc.).
+  * @note   If a PGAERR is set during a Program memory half page write, the 
+  *         complete write operation is aborted. Software should then reset the 
+  *         FPRG and PROG/DATA bits and restart the write operation from the 
+  *         beginning.
+  * @retval HAL Status: The returned value can be:  
+  *    HAL_ERROR, HAL_OK or HAL_TIMEOUT. 
+  */
+__RAM_FUNC HAL_FLASHEx_HalfPageProgram(uint32_t Address, uint32_t* pBuffer)
+{
+  uint32_t count = 0; 
+   
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Set the DISMCYCINT[0] bit in the Auxillary Control Register (0xE000E008) 
+     This bit prevents the interruption of multicycle instructions and therefore 
+     will increase the interrupt latency. of Cortex-M3. */
+  SCnSCB->ACTLR |= SCnSCB_ACTLR_DISMCYCINT_Msk;
+  
+  /* Wait for last operation to be completed */
+  status = FLASHRAM_WaitForLastOperation(HAL_FLASH_TIMEOUT_VALUE);
+  
+  if(status == HAL_OK)
+  {
+    /* if the previous operation is completed, proceed to program the new  
+    half page */
+    FLASH->PECR |= FLASH_PECR_FPRG;
+    FLASH->PECR |= FLASH_PECR_PROG;
+    
+    /* Write one half page directly with 32 different words */
+    while(count < 32)
+    {
+      *(__IO uint32_t*) ((uint32_t)(Address + (4 * count))) = *(pBuffer++);
+      count ++;  
+    }
+    /* Wait for last operation to be completed */
+    status = FLASHRAM_WaitForLastOperation(HAL_FLASH_TIMEOUT_VALUE);
+ 
+    /* if the write operation is completed, disable the PROG and FPRG bits */
+    FLASH->PECR &= (uint32_t)(~FLASH_PECR_PROG);
+    FLASH->PECR &= (uint32_t)(~FLASH_PECR_FPRG);
+  }
+
+  SCnSCB->ACTLR &= ~SCnSCB_ACTLR_DISMCYCINT_Msk;
+    
+  /* Return the Write Status */
+  return status;
+}
+
+/**
+  * @}
+  */
+
+/** @defgroup FLASHRamfunc_Exported_Functions_Group3 FLASH RAM DATA EEPROM functions
+ *
+@verbatim  
+@endverbatim
+  * @{
+  */
+
+/**
+  * @brief  Erase a double word in data memory.
+  * @param  Address: specifies the address to be erased.
+  * @note   To correctly run this function, the HAL_FLASH_EEPROM_Unlock() function
+  *         must be called before.
+  *         Call the HAL_FLASH_EEPROM_Lock() to he data EEPROM access
+  *         and Flash program erase control register access(recommended to protect 
+  *         the DATA_EEPROM against possible unwanted operation).
+  * @note   Data memory double word erase is possible only from SRAM.
+  * @note   A double word is erased to the data memory only if the first address 
+  *         to load is the start address of a double word (multiple of 8 bytes).
+  * @note   During the Data memory double word erase, all read operations are 
+  *         forbidden (this includes DMA read operations and debugger read 
+  *         operations such as breakpoints, periodic updates, etc.).
+  * @retval HAL Status: The returned value can be: 
+  *    HAL_ERROR, HAL_OK or HAL_TIMEOUT.
+  */
+
+__RAM_FUNC HAL_FLASHEx_DATAEEPROM_EraseDoubleWord(uint32_t Address)
+{
+  HAL_StatusTypeDef status = HAL_OK;
+  
+  /* Set the DISMCYCINT[0] bit in the Auxillary Control Register (0xE000E008) 
+     This bit prevents the interruption of multicycle instructions and therefore 
+     will increase the interrupt latency. of Cortex-M3. */
+  SCnSCB->ACTLR |= SCnSCB_ACTLR_DISMCYCINT_Msk;
+    
+  /* Wait for last operation to be completed */
+  status = FLASHRAM_WaitForLastOperation(HAL_FLASH_TIMEOUT_VALUE);
+  
+  if(status == HAL_OK)
+  {
+    /* If the previous operation is completed, proceed to erase the next double word */
+    /* Set the ERASE bit */
+    FLASH->PECR |= FLASH_PECR_ERASE;
+
+    /* Set DATA bit */
+    FLASH->PECR |= FLASH_PECR_DATA;
+   
+    /* Write 00000000h to the 2 words to erase */
+    *(__IO uint32_t *)Address = 0x00000000;
+    Address += 4;
+    *(__IO uint32_t *)Address = 0x00000000;
+   
+    /* Wait for last operation to be completed */
+    status = FLASHRAM_WaitForLastOperation(HAL_FLASH_TIMEOUT_VALUE);
+    
+    /* If the erase operation is completed, disable the ERASE and DATA bits */
+    FLASH->PECR &= (uint32_t)(~FLASH_PECR_ERASE);
+    FLASH->PECR &= (uint32_t)(~FLASH_PECR_DATA);
+  }  
+  
+  SCnSCB->ACTLR &= ~SCnSCB_ACTLR_DISMCYCINT_Msk;
+    
+  /* Return the erase status */
+  return status;
+}
+
+/**
+  * @brief  Write a double word in data memory without erase.
+  * @param  Address: specifies the address to be written.
+  * @param  Data: specifies the data to be written.
+  * @note   To correctly run this function, the HAL_FLASH_EEPROM_Unlock() function
+  *         must be called before.
+  *         Call the HAL_FLASH_EEPROM_Lock() to he data EEPROM access
+  *         and Flash program erase control register access(recommended to protect 
+  *         the DATA_EEPROM against possible unwanted operation).
+  * @note   Data memory double word write is possible only from SRAM.
+  * @note   A data memory double word is written to the data memory only if the 
+  *         first address to load is the start address of a double word (multiple 
+  *         of double word).
+  * @note   During the Data memory double word write, all read operations are 
+  *         forbidden (this includes DMA read operations and debugger read 
+  *         operations such as breakpoints, periodic updates, etc.).
+  * @retval HAL Status: The returned value can be: 
+  *    HAL_ERROR, HAL_OK or HAL_TIMEOUT. 
+  */ 
+__RAM_FUNC HAL_FLASHEx_DATAEEPROM_ProgramDoubleWord(uint32_t Address, uint64_t Data)
+{
+  HAL_StatusTypeDef status = HAL_OK;
+
+  /* Set the DISMCYCINT[0] bit in the Auxillary Control Register (0xE000E008) 
+     This bit prevents the interruption of multicycle instructions and therefore 
+     will increase the interrupt latency. of Cortex-M3. */
+  SCnSCB->ACTLR |= SCnSCB_ACTLR_DISMCYCINT_Msk;
+    
+  /* Wait for last operation to be completed */
+  status = FLASHRAM_WaitForLastOperation(HAL_FLASH_TIMEOUT_VALUE);
+  
+  if(status == HAL_OK)
+  {
+    /* If the previous operation is completed, proceed to program the new data*/
+    FLASH->PECR |= FLASH_PECR_FPRG;
+    FLASH->PECR |= FLASH_PECR_DATA;
+    
+    /* Write the 2 words */  
+     *(__IO uint32_t *)Address = (uint32_t) Data;
+     Address += 4;
+     *(__IO uint32_t *)Address = (uint32_t) (Data >> 32);
+    
+    /* Wait for last operation to be completed */
+    status = FLASHRAM_WaitForLastOperation(HAL_FLASH_TIMEOUT_VALUE);
+    
+    /* If the write operation is completed, disable the FPRG and DATA bits */
+    FLASH->PECR &= (uint32_t)(~FLASH_PECR_FPRG);
+    FLASH->PECR &= (uint32_t)(~FLASH_PECR_DATA);     
+  }
+  
+  SCnSCB->ACTLR &= ~SCnSCB_ACTLR_DISMCYCINT_Msk;
+    
+  /* Return the Write Status */
+  return status;
+}
+
+/**
+  * @}
+  */
+
+/**
+  * @}
+  */
+
+/** @defgroup FLASHRamfunc_Private_Functions FLASH RAM Private Functions
+  * @{
+  */ 
+
+/**
+  * @brief  Wait for a FLASH operation to complete.
+  * @param  Timeout: maximum flash operationtimeout
+  * @retval HAL status
+  */
+static __RAM_FUNC   FLASHRAM_WaitForLastOperation(uint32_t Timeout)
+{ 
+    /* Wait for the FLASH operation to complete by polling on BUSY flag to be reset.
+       Even if the FLASH operation fails, the BUSY flag will be reset and an error
+       flag will be set */
+       
+    while(__HAL_FLASH_GET_FLAG(FLASH_FLAG_BSY) && (Timeout != 0x00)) 
+    { 
+      Timeout--;
+    }
+    
+    if(Timeout == 0x00 )
+    {
+      return HAL_TIMEOUT;
+    }
+    
+    if( (__HAL_FLASH_GET_FLAG(FLASH_FLAG_WRPERR)     != RESET) || 
+        (__HAL_FLASH_GET_FLAG(FLASH_FLAG_PGAERR)     != RESET) || 
+        (__HAL_FLASH_GET_FLAG(FLASH_FLAG_SIZERR)     != RESET) || 
+#if defined (STM32L151xBA) || defined (STM32L152xBA) || \
+    defined (STM32L151xC) || defined (STM32L152xC) || defined (STM32L162xC)
+        (__HAL_FLASH_GET_FLAG(FLASH_FLAG_RDERR)      != RESET) || 
+#endif /* STM32L151xBA || STM32L152xBA || STM32L151xC || STM32L152xC || STM32L162xC */
+#if defined(STM32L100xC) || defined (STM32L151xC) || defined (STM32L152xC) || defined (STM32L162xC) || \
+    defined(STM32L151xCA) || defined (STM32L151xD) || defined (STM32L152xCA) || defined (STM32L152xD) || defined (STM32L162xCA) || defined (STM32L162xD) || \
+    defined(STM32L151xE) || defined (STM32L152xE) || defined (STM32L162xE)
+        (__HAL_FLASH_GET_FLAG(FLASH_FLAG_OPTVERRUSR) != RESET) || 
+#endif /* STM32L100xC || STM32L151xC || STM32L152xC || STM32L162xC || STM32L151xCA || STM32L151xD || STM32L152xCA || STM32L152xD || STM32L162xCA || STM32L162xD || STM32L151xE || STM32L152xE || STM32L162xE */
+        (__HAL_FLASH_GET_FLAG(FLASH_FLAG_OPTVERR)    != RESET) )
+    {
+      return HAL_ERROR;
+    }
+  
+    /* If there is an error flag set */
+    return HAL_OK;
+}
+
+#endif /* HAL_FLASH_MODULE_ENABLED */
+  
+/**
+  * @}
+  */
+
+/**
+  * @}
+  */
+
+/**
+  * @}
+  */
+
+     
+/************************ (C) COPYRIGHT STMicroelectronics *****END OF FILE****/